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| DISCRETE SEMICONDUCTORS DATA SHEET BFQ18A NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT89 envelope intended for application in thick and thin-film circuits. It is primarily intended for MATV purposes. PINNING PIN 1 2 3 DESCRIPTION Code: FF emitter collector base 1 Bottom view 2 page BFQ18A 3 MBK514 Fig.1 SOT89. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot fT Cre dim PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency feedback capacitance intermodulation distortion up to Ts = 155 C (note 1) IC = 100 mA; VCE = 10 V; f = 500 MHz; Tj = 25 C IC = 0; VCE = 10 V; f = 10.7 MHz IC = 80 mA; VCE = 10 V; RL = 75 ; Vo = 700 mV; measured at f(p+q-r) = 793.25 MHz open base CONDITIONS open emitter TYP. MAX. UNIT - - - - 4 1.2 - 25 18 150 1 - - -60 V V mA W GHz pF dB LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 155 C (note 1) open emitter open base open collector CONDITIONS MIN. - - - - - -65 - MAX. 25 18 2 150 1 150 175 UNIT V V V mA W C C September 1995 2 Philips Semiconductors Product specification NPN 4 GHz wideband transistor THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL hFE Cc Ce Cre fT dim Note 1. Ic = 80 mA; VCE = 10 V; RL = 75 ; Vp = Vo = 700 mV; fp =795.25 MHz; Vq = Vo -6 dB; fq = 803.25 MHz; Vr = Vo -6 dB; fr = 805.25 MHz; measured at f(p+q-r) = 793.25 MHz. PARAMETER DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency intermodulation distortion (see Fig.2) CONDITIONS IC = 100 mA; VCE = 10 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCE = 10 V; f = 10.7 MHz IC = 100 mA; VCE = 10 V; f = 500 MHz note 1 MIN. 25 - - - - - PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 155 C (note 1) BFQ18A THERMAL RESISTANCE 20 K/W TYP. - 2 11 1.2 4 -60 UNIT pF pF pF GHz dB September 1995 3 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ18A MBB361 handbook, halfpage handbook, halfpage 120 5 H 200 5 H 10 k L1 10 nF 1.5 nF VBB VCC 2.2 nF h FE 80 10 nF 4.7 nF DUT 2.2 nF 0.68 pF 12 0 0 40 80 120 160 I C (mA) RL 40 0.68 pF MBB829 f = 40 - 860 MHz. VCE = 10 V; Tj = 25 C. Fig.2 Intermodulation distortion MATV test circuit. Fig.3 DC current gain as a function of collector current. handbook, halfpage 8 MBB357 fT (GHz) 6 4 2 0 0 40 80 120 I C (mA) 160 VCE = 10 V; f = 500 MHz; Tj = 25 C. Fig.4 Transition frequency as a function of collector current. September 1995 4 Philips Semiconductors Product specification NPN 4 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads BFQ18A SOT89 D B A b3 E HE L 1 2 b2 3 c wM b1 e1 e 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 b1 0.48 0.35 b2 0.53 0.40 b3 1.8 1.4 c 0.44 0.37 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 L min. 0.8 w 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 September 1995 5 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BFQ18A This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 6 |
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